FW707 no.1805-1/4 features ? composite type with a p-channel mosfet driving from a 4v supply voltage contained in a single package ? high-density mounting speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 8 a drain current (pw 10s) i d duty cycle 1% --9 a drain current (pw 100ms) i d duty cycle 1% --19 a drain current (pw 10 s) i dp duty cycle 1% --52 a allowable power dissipation p d when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit, pw 10s 2.3 w total dissipation p t when mounted on ceramic substrate (2000mm 2 0.8mm), pw 10s 2.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7005a-003 72810pa tk im tc-00002341 sanyo semiconductors data sheet FW707 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : sop8 ? jeita, jedec : sc-87, sot96 ? minimum packing quantity : 1,000 pcs./reel packing type : tl marking electrical connection 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 1.8 max 4.4 6.0 0.8 0.8 5.0 0.2 0.1 0.3 0.43 1.27 0.7 1.5 14 5 8 w707 lot no. 8765 1234 ordering number : ena1805 tl
FW707 no.1805-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds = --30 v, v gs =0v -- 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = -- 8 a 10 s static drain-to-source on-state resistance r ds (on)1 i d = -- 8 a, v gs = -- 10v 20 26 m r ds (on)2 i d = -- 4 a, v gs = -- 4.5v 32 45 m r ds (on)3 i d = -- 4 a, v gs = -- 4v 36 51 m input capacitance ciss v ds =--10v, f=1mhz 900 pf output capacitance coss v ds =--10v, f=1mhz 240 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 160 pf turn-on delay time t d (on) see speci ed test circuit. 8.7 ns rise time t r see speci ed test circuit. 73 ns turn-off delay time t d (off) see speci ed test circuit. 84 ns fall time t f see speci ed test circuit. 74 ns total gate charge qg v ds =--15v, v gs =--10v, i d =--8a 18 nc gate-to-source charge qgs v ds =--15v, v gs =--10v, i d =--8a 2.1 nc gate-to-drain ?miller? charge qgd v ds =--15v, v gs =--10v, i d =--8a 4.7 nc diode forward voltage v sd i s =--8a, v gs =0v --0.82 --1.2 v switching time test circuit pw=10 s d.c. 1% p. g 50 g s d i d = --8a r l =1.87 v dd = --15v v out FW707 v in 0 --10v v in i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 -- 8 -- 5 -- 7 -- 4 -- 6 -- 3 -- 2 -- 1 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 it15805 0 --1.0 --0.5 --1.5 --2.0 --4.0 --3.0 --2.5 --3.5 0 -- 2 -- 4 -- 6 --16 --14 --12 --10 -- 8 -- 2 5 c it15806 --4.0v --3.0v --3.5v --5.0.v ta=75 c v ds = --10v --10v 25 c v gs = --2.5v --4.5v
FW707 no.1805-3/4 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds a s o drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it15809 it15810 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0.1 1.0 7 5 3 2 3 2 2 10 7 5 3 --0.1 2 --0.01 23 57 --1.0 2 357 ta= --25 c v ds = --10v --0.01 2 3 --0.1 7 5 v gs =0v --0.1 --1.0 23 57 --10 23 57 v dd = --15v v gs = --10v t d (on) t d (off) t f it15811 0 --15 --25 1000 7 5 3 2 3 2 100 5 --30 --5 --10 --20 ciss coss crss it15812 10 2 3 7 2 7 5 100 2 3 ta=75 c 25 c - -25 c f=1mhz 0 --4 --8 --12 --16 --2 --6 --10 --14 10 20 30 60 40 50 70 80 0 20 10 40 30 60 50 70 0 it15807 it15808 i d = --4a --8a ta=25 c 75 c 25 c 2 3 --1.0 7 5 2 --60 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --4.0v, i d = --4a v gs = --10v, i d = --8a v gs = --4.5v, i d = --4a t r --10 357 3 --10 7 5 2 2 3 020 16 18 46 2 8 10 14 12 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --100 --0.01 2 23 57 --0.01 --0.1 2 357 --1.0 it15814 it15813 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --10 100 s 10ms 100ms 10s operation in this area is limited by r ds (on). i d = - -8a dc operation i dp = --52a (pw 10 s) v ds = --15v i d = --8a 1ms 2 357 --10 35 3 5 7 --10 ta=25 c single pulse when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit
FW707 no.1805-4/4 ps this catalog provides information as of july, 2010. speci cations and information herein are subject to change without notice. note on usage : since the FW707 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. allowable power dissipation(fet2), p d -- w p d (fet1) -- p d (fet2) allowable power dissipation(fet1), p d -- w ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 3.0 2.0 2.5 2.3 1unit 0 0 0.4 0.8 0.2 0.6 0.4 1.2 1.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 2.0 2.2 1.6 1.4 1.8 1.6 2.4 2.2 2.3 2.0 2.4 it15804 it15803 when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s total dissipation when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s
|
